Luminous powder encapsulation film

The invention relates to a method for preparing a luminous powder encapsulation film, wherein the electroluminescent device produced by the luminous powder prepared by the method does not need to be further encapsulated. Silicon nitride is a transparent material with good chemical stability, thermal stability, and tightness, high dielectric constant and insulation factor, and high breakdown resistance, which can effectively prevent ion migration. Since the temperature of the silicon nitride compound is high (above 900[deg.] C.), the light emission luminance of the light emitting powder is reduced, so plasma enhanced chemical vapor deposition is used. The plasma has a large energy and the electron temperature is high, so that silane and ammonia can be synthesized into silicon nitride at a relatively low temperature.